Scanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces
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چکیده
investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces Wilhelm Melitz, Jian Shen, Sangyeob Lee, Joon Sung Lee, Andrew C. Kummel, Ravi Droopad, and Edward T. Yu Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093, USA Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093, USA Department of Physics, Texas State University, San Marcos, Texas 78666, USA Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA
منابع مشابه
Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)-(4x2).
Hafnium oxide interfaces were studied on two related group III rich semiconductor surfaces, InAs(0 0 1)-(4x2) and In(0.53)Ga(0.47)As(0 0 1)-(4x2), via two different methods: reactive oxidation of deposited Hf metal and electron beam deposition of HfO(2). The interfaces were investigated with scanning tunneling microscopy and spectroscopy (STS). Single Hf atom chemisorption sites were identified...
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تاریخ انتشار 2010